FDP027N08B

FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 Features RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 112 nC Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP027N08B_F102 VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) 80 ±20 223* 158* 120 892 917 6.0 246 1.64 TJ, TSTG Operating and Storage Temperature Range -55 to +175 TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 *Calculated continuous current based on maximum allowabl...