TH58BVG3S0HTA00

TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages). The TH58BVG3S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TH58BVG3S0HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read Mode control Serial input/output Command control Number of vali...