Power MOSFET
R6008ANX
Nch 600V 8A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max.)
...
Description
R6008ANX
Nch 600V 8A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max.)
0.8Ω
ID
±8A
TO-220FM
PD
51W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications Packing
Bulk
Reel size (mm)
-
lApplication Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs)
500
Taping code
-
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6008ANX Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current
TC = 25°C TC = 100°C
ID*1 ID*1
±8 A ±3.8 A
Pulsed drain current
IDP*2 ±32 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 4 A
Avalanche energy, single pulse
EAS*3
4.3 mJ
Avalanche energy, repetitive
EAR*4
3.4 mJ
Power dissipation (Tc = 25°C)
PD 51 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
Reverse diode dv/dt
dv/dt 15 V/ns
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1/13
20160324 - Rev.002
NotNeRewcDoemsimgennsded for
R6008ANX
lAbsolute maximum ratings Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Ther...
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