PowerTrench MOSFET. FDP075N15A Datasheet

FDP075N15A Datasheet PDF, Equivalent


Part Number

FDP075N15A

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDP075N15A Datasheet


FDP075N15A Datasheet
March 2015
FDP075N15A / FDB075N15A
N-Channel PowerTrench® MOSFET
150 V, 130 A, 7.5 m
Features
• RDS(on) = 6.25 m(Typ.) @ VGS = 10 V, ID = 100 A
• Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
GDS TO-220
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120 A.
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient, D2-PAK (1 in2 Pad of 2-oz Copper), Max.
FDP075N15A_F102
FDB075N15A
150
±20
±30
130*
92
522
588
6.0
333
2.22
-55 to +175
300
FDP075N15A_F102
FDB075N15A
0.45
62.5
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C5
1
www.fairchildsemi.com

FDP075N15A Datasheet
Package Marking and Ordering Information
Part Number
FDP075N15A_F102
FDB075N15A
Top Mark
FDP075N15A
FDB075N15A
Package
TO-220
D2-PAK
Packing Method
Tube
Tape and Reel
Reel Size
N/A
330 mm
Tape Width
N/A
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 A, VGS = 0 V
ID = 250 A, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, VGS = 0 V
VDS = 75 V, ID = 100 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
6.25
164
5525
516
21
909
77
26
11
16
2.29
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 100 A,
VGS = 10 V, RG = 4.7
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 100 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 75 V, ISD = 100 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25C, L = 3 mH, IAS = 19.8 A.
3. ISD 100 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
28
37
62
21
-
-
-
97
264
Quantity
50 units
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
A
nA
4.0 V
7.5 m
-S
7350
685
-
-
100
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
66 ns
84 ns
134 ns
52 ns
130*
520
1.25
-
-
A
A
V
ns
nC
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C5
2
www.fairchildsemi.com


Features Datasheet pdf FDP075N15A / FDB075N15A — N-Channel Po werTrench® MOSFET March 2015 FDP075N 15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Fea tures • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switchi ng • Low Gate Charge • High Perform ance Trench Technology for Extremely Lo w RDS(on) • High Power and Current Handling Capability • RoHS Compliant  Description This N-Channel MOSFET is produced using Fairchild Semiconduct or’s advanced PowerTrench® process t hat has been tailored to minimize the o n-state resistance while maintaining su perior switching performance. Applicati ons • Synchronous Rectification for A TX / Server / Telecom PSU • Battery P rotection Circuit • Motor Drives and Uninterruptible Power Supplies • Micr o Solar Inverter D D GDS TO-220 G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symb ol Parameter VDSS VGSS ID IDM EAS dv/ dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Aval.
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