RJK1001DPN-E0

RJK1001DPN-E0 N-Channel MOS FET 100 V, 80 A, 5.5 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)  Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at L = 100 H, Tch = 25C, Rg  50, 3. Tc = 25C Ratings 100 ±20 80 240 80 40 160 200 0.63 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 Page 1 of 6 RJK1001DPN-E0 Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Bo...