N-Channel PowerTrench MOSFET
FDP020N06B — N-Channel PowerTrench® MOSFET
FDP020N06B
N-Channel PowerTrench® MOSFET
60 V, 313 A, 2 mΩ
November 2013
F...
Description
FDP020N06B — N-Channel PowerTrench® MOSFET
FDP020N06B
N-Channel PowerTrench® MOSFET
60 V, 313 A, 2 mΩ
November 2013
Features
RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 194 nC Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noteed.
Symbol
Parameter
VDSS VGSS
ID
IDM EAS dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP020N06B_F102 60 ±20 313* 221* 120
1252 1859 6.0 333 2.2 -55 to +175 300
* Package limitation current ...
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