N-Channel MOSFET
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
FCA47N60 / FCA47N60_F109
N-Channel SuperFET® MOSFET
600 V, 47 A, ...
Description
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET
FCA47N60 / FCA47N60_F109
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
September 2017
Features
650 V @ TJ = 150°C Typ. RDS(on) = 58 mΩ Ultra Low Gate Charge (Typ. Qg= 210 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) 100% Avalanche Tested
Application
Solar Invertor AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G D S
TO-3PN
Absolute Maximum Ratings
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage Drain Current
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
(Note 2) (Note 1) (Note 1) (Note 3)
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
G...
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