Document
NTNUS3171PZ
MOSFET – Single P-Channel, Small Signal, SOT-1123, 1.0 x 0.6 mm
-20 V, -200 mA
Features
• Single P−Channel MOSFET • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm
Package
• 1.5 V Gate Voltage Rating • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State
Power Dissipation (Note 1)
tv5s
Steady State
tv5s
TA = 25°C TA = 85°C TA = 25°C
VDSS VGS
ID
TA = 25°C PD
−20 V
±8
V
−150
−110 mA
−200
−125 mW
−200
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IDM TJ, TSTG IS
TL
−600 mA −55 to °C
150
−200 mA 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2%
http://onsemi.com
V(BR)DSS −20 V
RDS(ON) MAX 3.5 W @ −4.5 V 4.0 W @ −2.5 V 5.5 W @ −1.8 V 7.0 W @ −1.5 V
ID Max −0.20 A
3
12 SOT−1123 CASE 524AA
MARKING DIAGRAM
5M
5 = Specific Device Code (Rotated 90° Clockwise)
M = Date Code
P−Channel MOSFET
D3
G 1
S2
ORDERING INFORMATION
Device
Package
Shipping†
NTNUS3171PZT5G SOT−1123 8000/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
June, 2019 − Rev. 1
Publication Order Number: NTNUS3171PZ/D
NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient – Steady State (Note 3)
RqJA
1000
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
600
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu.
Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
V(BR)DSS IDSS
IGSS
VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = −5.0 V TJ = 25°C VGS = 0 V, VDS = −5.0 V TJ = 85°C VGS = 0 V, VDS = −16 V TJ = 25°C
VDS = 0 V, VGS = ±5.0 V
Gate Threshold Voltage Drain−to−Source On Resistance
VGS(TH) RDS(ON)
Forward Transconductance
gFS
Source−Drain Diode Voltage
VSD
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −100 mA VGS = −2.5 V, ID = −50 mA VGS = −1.8 V, ID = −20 mA VGS = −1.5 V, ID = −10 mA VGS = −1.2 V, ID = −1.0 mA VDS = −5.0 V, ID = −125 mA
VGS = 0 V, IS = −200 mA
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
f = 1 MHz, VGS = 0 V VDS = −15 V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W
Fall Time
tf
4. Switching characteristics are independent of operating junction temperatures
Min Typ Max Unit
−20
V
−50
−100 nA
−200
±100 nA
−0.4 −0.7 −1.0
V
2.0 3.5
2.6 4.0
3.4 5.5
W
4.0 7.0
6.0
0.26
S
−0.5
−1.4
V
13
3.4
pF
1.6
30
56 ns
196
145
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTNUS3171PZ
TYPICAL CHARACTERISTICS
0.36 4.5 V
0.32
0.28
2.0 V VGS = 2.2 thru 2.5 V
TJ = 25°C 1.8 V
0.36 VDS ≥ 5 V
0.32 0.28
ID, DRAIN CURRENT (A)
0.24
0.24
1.6 V
0.20
0.20
0.16
0.16
1.4 V
0.12
0.12
0.08
1.2 V
0.08
TJ = 125°C
0.04 0
1.0 V
0.04 TJ = 25°C 0
TJ = −55°C
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
9.0
8.0
ID = 200 mA
TJ = 25°C
7.0
6.0
5.0
4.0
3.0
2.0
ID = 20 mA
1.0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
1.75 1.50
ID = 200 mA VGS = 4.5 V
1.25
3.5 TJ = 25°C
3
2.5
VGS = 2.5 V
2
VGS = 4.5 V
1.5
0.10
0.15
0.20
0.25
0.30 0.35
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and Gat.