DatasheetsPDF.com

NTNUS3171PZ Dataheets PDF



Part Number NTNUS3171PZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel MOSFET
Datasheet NTNUS3171PZ DatasheetNTNUS3171PZ Datasheet (PDF)

NTNUS3171PZ MOSFET – Single P-Channel, Small Signal, SOT-1123, 1.0 x 0.6 mm -20 V, -200 mA Features • Single P−Channel MOSFET • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package • 1.5 V Gate Voltage Rating • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. • This is a Pb−Free Device Applications • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Equipment MAXIMUM.

  NTNUS3171PZ   NTNUS3171PZ


Document
NTNUS3171PZ MOSFET – Single P-Channel, Small Signal, SOT-1123, 1.0 x 0.6 mm -20 V, -200 mA Features • Single P−Channel MOSFET • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package • 1.5 V Gate Voltage Rating • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. • This is a Pb−Free Device Applications • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID TA = 25°C PD −20 V ±8 V −150 −110 mA −200 −125 mW −200 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL −600 mA −55 to °C 150 −200 mA 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% http://onsemi.com V(BR)DSS −20 V RDS(ON) MAX 3.5 W @ −4.5 V 4.0 W @ −2.5 V 5.5 W @ −1.8 V 7.0 W @ −1.5 V ID Max −0.20 A 3 12 SOT−1123 CASE 524AA MARKING DIAGRAM 5M 5 = Specific Device Code (Rotated 90° Clockwise) M = Date Code P−Channel MOSFET D3 G 1 S2 ORDERING INFORMATION Device Package Shipping† NTNUS3171PZT5G SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 1 June, 2019 − Rev. 1 Publication Order Number: NTNUS3171PZ/D NTNUS3171PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Junction−to−Ambient – Steady State (Note 3) RqJA 1000 Junction−to−Ambient – t = 5 s (Note 3) RqJA 600 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) V(BR)DSS IDSS IGSS VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = −5.0 V TJ = 25°C VGS = 0 V, VDS = −5.0 V TJ = 85°C VGS = 0 V, VDS = −16 V TJ = 25°C VDS = 0 V, VGS = ±5.0 V Gate Threshold Voltage Drain−to−Source On Resistance VGS(TH) RDS(ON) Forward Transconductance gFS Source−Drain Diode Voltage VSD CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −100 mA VGS = −2.5 V, ID = −50 mA VGS = −1.8 V, ID = −20 mA VGS = −1.5 V, ID = −10 mA VGS = −1.2 V, ID = −1.0 mA VDS = −5.0 V, ID = −125 mA VGS = 0 V, IS = −200 mA Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS f = 1 MHz, VGS = 0 V VDS = −15 V SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W Fall Time tf 4. Switching characteristics are independent of operating junction temperatures Min Typ Max Unit −20 V −50 −100 nA −200 ±100 nA −0.4 −0.7 −1.0 V 2.0 3.5 2.6 4.0 3.4 5.5 W 4.0 7.0 6.0 0.26 S −0.5 −1.4 V 13 3.4 pF 1.6 30 56 ns 196 145 http://onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTNUS3171PZ TYPICAL CHARACTERISTICS 0.36 4.5 V 0.32 0.28 2.0 V VGS = 2.2 thru 2.5 V TJ = 25°C 1.8 V 0.36 VDS ≥ 5 V 0.32 0.28 ID, DRAIN CURRENT (A) 0.24 0.24 1.6 V 0.20 0.20 0.16 0.16 1.4 V 0.12 0.12 0.08 1.2 V 0.08 TJ = 125°C 0.04 0 1.0 V 0.04 TJ = 25°C 0 TJ = −55°C 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 9.0 8.0 ID = 200 mA TJ = 25°C 7.0 6.0 5.0 4.0 3.0 2.0 ID = 20 mA 1.0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. Gate Voltage 1.75 1.50 ID = 200 mA VGS = 4.5 V 1.25 3.5 TJ = 25°C 3 2.5 VGS = 2.5 V 2 VGS = 4.5 V 1.5 0.10 0.15 0.20 0.25 0.30 0.35 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gat.


5LP01M NTNUS3171PZ NTNUS3171PZT5G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)