NTNUS3171PZT5G

NTNUS3171PZ Small Signal MOSFET −20 V, −200 mA, Single P−Channel, 1.0 x 0.6 mm SOT−1123 Package Features Single P−Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. This is a Pb−Free Device Applications High Side Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID TA = 25°C PD −20 ±8 −150 −110 −200 −125 −200 V V mA mW Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL −600 −55 to 150 −200 260 mA °C mA °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v...