Signal MOSFET. 5LP01C Datasheet

5LP01C MOSFET. Datasheet pdf. Equivalent

Part 5LP01C
Description P-Channel Small Signal MOSFET
Feature Ordering number : EN6619C 5LP01C P-Channel Small Signal MOSFET –50V, –0.07A, 23Ω, Single CP http:/.
Manufacture ON Semiconductor
Datasheet
Download 5LP01C Datasheet

www.DataSheet4U.com Ordering number : ENN6619 5LP01C P-Chan 5LP01C Datasheet
Ordering number : EN6619C 5LP01C P-Channel Small Signal MOS 5LP01C Datasheet
Recommendation Recommendation Datasheet 5LP01C Datasheet




5LP01C
Ordering number : EN6619C
5LP01C
P-Channel Small Signal MOSFET
–50V, –0.07A, 23Ω, Single CP
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--50
±10
--0.07
--0.28
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9 0.1
3
5LP01C-TB-E
5LP01C-TB-H
Ordering & Package Information
Device
Package
Shipping
5LP01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
5LP01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Packing Type: TB
TB
Marking
XB
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002969/62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/6



5LP01C
5LP01C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specied Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
IS= --70mA, VGS=0V
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --25V
ID= --40mA
RL=625Ω
D VOUT
5LP01C
P.G 50Ω
S
min
--50
Ratings
typ
--0.4
70
100
18
20
30
7.4
4.2
1.3
20
35
160
150
1.40
0.16
0.23
--0.85
max
--1
±10
--1.4
23
28
60
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.6619-2/6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)