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5LP01S Dataheets PDF



Part Number 5LP01S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Small Signal MOSFET
Datasheet 5LP01S Datasheet5LP01S Datasheet (PDF)

Ordering number : EN6666B 5LP01S P-Channel Small Signal MOSFET –50V, –0.07A, 23Ω, Single SMCP http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is de.

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Ordering number : EN6666B 5LP01S P-Channel Small Signal MOSFET –50V, –0.07A, 23Ω, Single SMCP http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --50 ±10 --0.07 --0.28 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7027-004 1.6 0.4 0.8 0.4 5LP01S-TL-E Product & Package Information • Package : SMCP • JEITA, JEDEC : SC-75, SOT-416 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking 0.1 0.3 1.6 0.5 0.5 0.2 LOT No. LOT No. 0.75 0.6 0 to 0.1 1 2 3 0.1 MIN 1 : Gate 2 : Source 3 : Drain SMCP TL Electrical Connection 3 XB 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/41006PE MSIM TB-00002192/D2000 TSIM TA-3075 No.6666-1/7 5LP01S Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID= --1mA, VGS=0V VDS= --50V, VGS=0V VGS=±8V, VDS=0V VDS= --10V, ID= --100μA VDS= --10V, ID= --40mA ID= --40mA, VGS= --4V ID= --20mA, VGS= --2.5V ID= --5mA, VGS= --1.5V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --70mA IS= --70mA, VGS=0V Switching Time Test Circuit 0V VIN --4V VIN PW=10μs D.C.≤1% G VDD= --25V ID= --40mA RL=625Ω D VOUT 5LP01S P.G 50Ω S min --50 Ratings typ --0.4 70 100 18 20 30 7.4 4.2 1.3 20 35 160 150 1.40 0.16 0.23 --0.85 max --1 ±10 --1.4 23 28 60 --1.2 Unit V μA μA V mS Ω Ω Ω pF pF pF ns ns ns ns nC nC nC V Ordering Information Device 5LP01S-TL-E Package SMCP Shipping 3,000pcs./reel memo Pb Free No.6666-2/7 Drain Current, ID -- A 5LP01S --4.0V --6.0V --3.5V --3.0V --0.07 --0.06 --0.05 ID -- VDS --2.5V --2.0V --0.14 --0.12 --0.10 Ta= --25°C 25°C ID -- VGS VDS= --10V 75°C Drain Current, ID -- A --0.04 --0.08 --0.03 --0.02 VGS= --1.5V --0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 Drain-to-Source Voltage, VDS -- V IT00090 RDS(on) -- VGS 40 Ta=25°C 35 30 --0.06 --0.04 --0.02 0 0 100 7 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- ID IT00091 VGS= --4V 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 --40mA 20 ID= --20mA 15 10 0 1000 7 5 3 2 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V IT00092 RDS(on) -- ID VGS= --2.5V 100 7 5 3 2 10 --0.01 40 Ta=75°C 25°C --25°C 23 5 7 --0.1 Drain Current, ID -- A RDS(on) -- Ta 23 IT00094 35 30 25 20 I D= -I-D20=m--A40, mVAG,SV= --2.5V GS= --4.0V 15 10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT00096 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, | yfs | -- S 3 2 10 --0.01 100 7 5 3 2 Ta=75°C 25°C --25°C 23 5 7 --0.1 Drain Current, ID -- A RDS(on) -- ID 23 IT00093 VGS= --1.5V Ta=75°C 25°C --25°C 10 --0.001 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 23 5 7 --0.01 Drain Current, ID -- A | yfs | -- ID 23 IT00095 VDS= --10V Ta= --25°C 75°C 25°C 23 5 7 --0.1 Drain Current, ID -- A 23 IT00097 No.6666-3/7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Source Current, IS -- A Ta=75°C 25°C --25°C Ciss, Coss, Crss -- pF 5LP01S IS -- VSD 3 VGS=0V 2 --0.1 7 5 3 2 --0.01 --0.5 100 7 5 3 2 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 Diode Forward Voltage, VSD -- V IT00098 Ciss, Coss, Crss -- VDS f=1MHz 10 7 Ciss 5 Coss 3 2 1.0 7 5 3 2 0.1 0 0.20 Crss --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 Drain-to-Source Voltage, VDS -- V IT00100 PD -- Ta Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns SW Time -- ID 1000 VDD= --25V 7 VGS = --4V 5 3 tf 2 td(off) 100 7 5 tr 3 2 td(on) 10 --0.01 --10 VDS= --10V --9 ID= --70m.


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