Signal MOSFET. 3LP01S Datasheet

3LP01S MOSFET. Datasheet pdf. Equivalent

Part 3LP01S
Description P-Channel Small Signal MOSFET
Feature Ordering number : EN6681C 3LP01S P-Channel Small Signal MOSFET –30V, –0.1A, 10.4Ω, Single SMCP htt.
Manufacture ON Semiconductor
Datasheet
Download 3LP01S Datasheet

Ordering number : EN6681C 3LP01S P-Channel Small Signal MOS 3LP01S Datasheet
Ordering number : EN6681B 3LP01S SANYO Semiconductors DATA 3LP01S Datasheet
www.DataSheet4U.com Ordering number : ENN6648 3LP01SS P-Ch 3LP01SS Datasheet
Ordering number : EN6648B 3LP01SS P-Channel Small Signal MO 3LP01SS Datasheet
Recommendation Recommendation Datasheet 3LP01S Datasheet




3LP01S
Ordering number : EN6681C
3LP01S
P-Channel Small Signal MOSFET
–30V, –0.1A, 10.4Ω, Single SMCP
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--30
±10
--0.1
--0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
1.6
0.4 0.8 0.4
3LP01S-TL-E
1
2
3
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SMCP
Ordering & Package Information
Device
Package
Shipping
3LP01S-TL-E
SMCP
SC-75,SOT-416
3,000
pcs./reel
Packing Type: TL
Marking
memo
Pb-Free
TL
Electrical Connection
3
XA
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002948/62712 TKIM/41006PE MSIM TB-00002191/12201 TSIM TA-2005 No.6681-1/6



3LP01S
3LP01S
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specied Test Circuit.
VDS= --10V, VGS= --10V, ID= --100mA
IS= --100mA, VGS=0V
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --50mA
RL=300Ω
D VOUT
3LP01S
P.G 50Ω S
min
--30
Ratings
typ
--0.4
80
110
8
11
27
7.5
5.7
1.8
24
55
120
130
1.43
0.18
0.25
--0.83
max
--1
±10
--1.4
10.4
15.4
54
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.6681-2/6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)