NTR4170N

NTR4170N Power MOSFET 30 V, 3.1 A, Single N−Channel, SOT−23 Features Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb−Free Device Applications Power Converters for Portables Battery Management Load/Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady State 2.4 t ≤ 30 s TA = 25°C 3.1 t ≤ 10 s Steady State t ≤ 30 s TA = 85°C ID 3.9 1.7 A 2.3 t ≤ 10 s 2.8 Power Dissipation (Note 1) Steady State t ≤ 30 s TA = 25°C PD 0.48 W 0.82 t ≤ 10 s Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature PD 1.25 IDM 8.0 A TJ, Tstg −55 to 150 °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 0.82 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 30 s RqJA 153 Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). http...