NTR4171P

NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device Applications Load Switch Optimized for Battery and Load Management Applications in Portable Equipment like Cell Phones, PDA’s, Media Players, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −30 ±12 −2.2 −1.5 −3.5 0.48 1.25 V V A W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM −15.0 A TJ, Tstg −55 to 150 °C IS −1.0 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) http://onsemi.com V(BR...