Power MOSFET. NTR4171P Datasheet

NTR4171P MOSFET. Datasheet pdf. Equivalent

Part NTR4171P
Description Power MOSFET
Feature NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • Low RDS(on) at Low Gate Vo.
Manufacture ON Semiconductor
Datasheet
Download NTR4171P Datasheet

NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT− NTR4171P Datasheet
Recommendation Recommendation Datasheet NTR4171P Datasheet




NTR4171P
NTR4171P
Power MOSFET
30 V, 3.5 A, Single PChannel, SOT23
Features
Low RDS(on) at Low Gate Voltage
Low Threshold Voltage
High Power and Current Handling Capability
This is a PbFree Device
Applications
Load Switch
Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
t5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±12
2.2
1.5
3.5
0.48
1.25
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM 15.0 A
TJ,
Tstg
55 to
150
°C
IS 1.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient Steady State (Note 1)
RqJA
260 °C/W
JunctiontoAmbient t 10 s (Note 1)
RqJA
100
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
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V(BR)DSS
30 V
RDS(on) MAX
75 mW @ 10 V
110 mW @ 4.5 V
150 mW @ 2.5 V
ID MAX
2.2 A
1.8 A
1.0 A
PCHANNEL MOSFET
S
G
D
3
1
2
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TRFMG
G
1
Gate
2
Source
TRF = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTR4171PT1G
Package
SOT23
(PbFree)
Shipping
3000/Tape & Reel
NTR4171PT3G SOT23 10000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 Rev. 1
1
Publication Order Number:
NTR4171P/D



NTR4171P
NTR4171P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V(BR)DSS
V(BR)DSS
/TJ
IDSS
VGS = 0 V, ID = 250 mA
ID = 250 mA, Reference to 25°C
VGS = 0 V, VDS = 24 V, TJ = 25°C
VGS = 0 V, VDS = 24 V, TJ = 85°C
30
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VDS = 0 V, VGS = "12 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource OnResistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 2.2 A
VGS = 4.5 V, ID = 1.8 A
VGS = 2.5 V, ID = 1.0 A
VDS = 5.0 V, ID = 2.2 A
0.7
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS
= 0 V, f
VDS =
= 1.0 MHz,
15 V
VGS = 10 V, VDS = 15 V,
ID = 3.5 A
VGS = 4ID.5=V, 3V.D5SA= 15 V,
VGS = 10 V, VDS = 15 V,
ID = 3.5 A, RG = 6 W
VGS = 4.5 V, VDS = 15 V,
ID = 3.5 A, RG = 6 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 1.0 A, TJ = 25°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, IS = 1.0 A,
tb dISD/dt = 100 A/ms
Reverse Recovery Charge
QRR
2. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Typ
24
1.15
3.5
50
60
90
7.0
720
95
65
15.6
0.7
1.6
2.6
7.4
0.7
1.6
2.6
6.1
8.0
11
32
14
9.0
16
25
22
0.8
14
10
4.0
8.0
Max
1.0
5.0
±0.1
1.4
75
110
150
1.2
Units
V
mV/°C
mA
mA
V
mV/°C
mW
S
pF
nC
nC
W
ns
ns
V
ns
nC
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