Signal MOSFET. NTE4153N Datasheet

NTE4153N MOSFET. Datasheet pdf. Equivalent


Part NTE4153N
Description Small Signal MOSFET
Feature NTA4153N, NTE4153N, NVA4153N, NVE4153N MOSFET – Single, N-Channel with ESD Protection, Small Signal.
Manufacture On Semiconductor
Datasheet
Download NTE4153N Datasheet

NTA4153N, NTE4153N, NVA4153N, NVE4153N MOSFET – Single, N-C NTE4153N Datasheet
Recommendation Recommendation Datasheet NTE4153N Datasheet




NTE4153N
NTA4153N, NTE4153N,
NVA4153N, NVE4153N
MOSFET – Single,
N-Channel with ESD
Protection, Small Signal,
SC-75 and SC-89
20 V, 915 mA
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
PbFree Packages are Available
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
Steady State
VDSS
VGS
ID
PD
20 V
±6.0 V
915 mA
660
300 mW
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
1.3
55 to
150
280
260
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Units
JunctiontoAmbient Steady State (Note 1)
SC75 / SOT416
SC89
RqJA
°C/W
416
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
0.127 W @ 4.5 V
0.170 W @ 2.5 V
0.242 W @ 1.8 V
0.500 W @ 1.5 V
ID MAX
915 mA
3
NChannel MOSFET
12
MARKING DIAGRAM &
PIN ASSIGNMENT
3
SC75 / SOT416
2
1
CASE 463
STYLE 5
3
Drain
XX MG
3G
SC89
2
1
CASE 463C
12
Gate Source
XX = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SC75, SC89
Gate 1
3 Drain
Source 2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2019 Rev. 7
1
Publication Order Number:
NTA4153N/D



NTE4153N
NTA4153N, NTE4153N, NVA4153N, NVE4153N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
20 26
18.4
V
mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V, VDS = 16 V
VDS = 0 V, VGS = ±4.5 V
100 nA
±1.0 mA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
0.45 0.76
2.15
1.1 V
mV/°C
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 350 mA
VGS = 1.5 V, ID = 40 mA
VDS = 10 V, ID = 400 mA
127 230 mW
170 275
242 700
500 950
1.4 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 16 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.2 A
110 pF
16
12
1.82 nC
0.2
0.3
0.42
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 10 V,
ID = 0.2 A, RG = 10 W
3.7 ns
4.4
25
7.6
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 200 mA
TJ = 125°C
0.67 1.1 V
0.54
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2





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