Power MOSFET. MCH3376 Datasheet

MCH3376 MOSFET. Datasheet pdf. Equivalent


Part MCH3376
Description Power MOSFET
Feature Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.
Manufacture ON Semiconductor
Datasheet
Download MCH3376 Datasheet

Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ MCH3376 Datasheet
Recommendation Recommendation Datasheet MCH3376 Datasheet




MCH3376
Ordering number : ENA1564B
MCH3376
Power MOSFET
–20V, 241m, –1.5A, Single P-Channel
http://onsemi.com
Features
ESD diode-Protected gate
High speed switching and Low loss
Pb-free and RoHS Compliance
Drive at low voltage:1.8V drive
Low RDS(on)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--20
±10
--1.5
--6
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7019A-003
2.0 0.15
MCH3376-TL-E
MCH3376-TL-W
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
3
0 to 0.02
QH
12
0.65 0.3
1 : Gate
2 : Source
3 : Drain
MCPH3
TL
Electrical Connection
3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00003112/60612TKIM/O1409TKIM PE No. A1564-1/5



MCH3376
MCH3376
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--750mA
ID=--750mA, VGS=--4.5V
ID=--300mA, VGS=--2.5V
ID=--100mA, VGS=--1.8V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--1.5A
IS=--1.5A, VGS=0V
min
--20
Ratings
typ
--0.4
1.14
1.9
185
275
410
120
26
20
5.3
9.7
16
14
1.7
0.28
0.47
--0.89
max
--1
±10
--1.4
241
385
615
--1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
--4.5V
0V
PW=10μs
D.C.1%
VIN
G
VDD= --10V
ID= --750mA
RL=13.3
D VOUT
P.G 50
S MCH3376
Ordering Information
Device
MCH3376-TL-E
MCH3376-TL-W
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1564-2/5





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