2SK2210

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power dissipation TC= 25˚C Ta= 25˚C Channel temperature Storage temperature * L= 5mH, IL= 4A, 1 pulse Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 750 ±30 ±4 ±8 40 50 2 150 –55 to +150 Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Condition VDS= 600V, VGS= 0 VGS= ±30V, VDS= 0 ID=1m...