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Productnnu
Power F-MOS FETs
2SK2210
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
s Applications
q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode
regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
Allowable power dissipation
TC= 25˚C Ta= 25˚C
Channel temperature
Storage temperature
* L= 5mH, IL= 4A, 1 pulse
Symbol VDSS VGSS ID IDP EAS *
PD
Tch Tstg
Rating 750 ±30 ±4 ±8 40 50 2 150
–55 to +150
Unit V V A A mJ
W
˚C ˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance
Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a)
Condition VDS= 600V, VGS= 0 VGS= ±30V, VDS= 0 ID=1m...