STL23NM50N

STL23NM50N N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Type STL23NM50N VDSS @ TJmax 550 V RDS(on) max < 0.210 Ω ID 14 A (1) 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 3 3 ' "OTTOMVIEW $ 0OWER&,!4˜X(6 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code STL23NM50N Marking 23NM50N Package PowerFLAT™ 8x8 HV Packaging Tape and reel October 2012 This is information on a product in full production. Doc ID 022339 Rev 2 1/13 www.st.com 13 Contents Contents STL23NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...