1N961B

1N957B...1N963B Vishay Telefunken Silicon Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 –65...+200 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V Rev. A3, 13-Nov-98 1 (3) 1N957B...1N963B Vishay Telefunken Type 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B VZnom 1) V 6.8 7.5 8.2 9.1 10 11 12 IZT for rzjT mA W 20 < 4.5 20 < 5.5 20 < 6.5 20 < 7.5 20 < 8.5 20 < 9.5 20 < 11.5 rzjk at IZK mA < 700 1.0 < 700 0.5 < 700 0.5 < 700 0.5 < 700 0.25 < 700 0.25 < 700 0.25 W mA max 150 75 50 25 10 5 5 IR at VR V 5.2 5.7 6.2 6.9 7.6 8.4 9.1 TK VZ %/K < –0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 1.)Based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30 K/W. Dimensions in mm Cathode Identification ∅ 0.55 max. technical drawings according to DIN specifications 94 9366 ∅ 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g 26 min. ...