2SA1805. A1805 Datasheet

A1805 2SA1805. Datasheet pdf. Equivalent

Part A1805
Description 2SA1805
Feature Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA1805 DESCRIPTION ·Wi.
Manufacture Inchange Semiconductor
Datasheet
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Inchange Semiconductor Silicon PNP Power Transistors Produc A1805 Datasheet
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A1805
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1805
DESCRIPTION
·With TO-3PML package
·Complement to type 2SC4690
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
·
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-140
-140
-5
-10
-20
-1
80
150
-55~150
UNIT
V
V
V
A
A
A
W



A1805
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-7A;IB=-0.7A
VBE Base-emitter voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
‹ hFE-1 classifications
RO
55-110
80-160
Product Specification
2SA1805
MIN TYP. MAX UNIT
-140
V
-2.0 V
-1.5 V
-5 μA
-5 μA
55 160
35
30 MHz
480 pF
2





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