A1805

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA1805 DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter · Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IBB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ VALUE -140 -140 -5 -10 -20 -1 80 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-7A;IB=-0.7A VBE Base-emitter voltage IC=-5A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V hFE-2 DC current gain IC=-5A ; VCE=-5V fT Transition frequency IC=-1A ; VCE=-5V COB Output capacitance IE=0; VCB=-10V;f=1MHz ‹ hFE-1 classifications RO 55-110 80-160 Product Specification 2SA1805 MIN TYP. MAX UNIT -140 V -2.0 V -1.5 V -5 μA -5 μA 55 160...