Document
STW36NM60N
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247
Features
Order code STW36NM60N
VDSS @ TJmax
650 V
RDS(on) max
< 0.105 Ω
ID 29 A
PW 210 W
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications – Automotive
Description
This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary Order code
STW36NM60N
Marking 36NM60N
3
!-V
Package TO-247
Packaging Tape and reel
June 2011
Doc ID 018963 Rev 1
1/13
www.st.com
13
Contents
Contents
STW36NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STW36NM60N
1 Electrical ratings
Electrical ratings
Table 2. Symbol
Absolute maximum ratings Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max.)
EAS
Single pulse avalanche energy (Starting Tj = 25 °C, ID = IAR, VDD = 50 V.)
dv/dt (2) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating juncion temperature
1. Pulse width limited by safe operating area. 2. ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max
Tl Maximum lead temperature for soldering purposes
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value 600 ± 25 29 18 116 210 10.5
345 15 -55 to 150 150
Value 0.6 30 300
Unit V V A A A W A
mJ V/ns °C °C
Unit °C/W °C/W
°C
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Electrical characteristics
2 Electrical characteristics
STW36NM60N
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on resistance
VGS = 10 V, ID = 14.5 A
Min. Typ. Max. Unit
600 V 10 µA 100 µA 100 nA
2 3 4V 0.092 0.105 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
2722
pF
- 173 - pF
1.75 pF
Coss
(1) eq.
Equivalent Output
capacitance
VGS = 0, VDS = 0 to 480 V
- 458 - pF
f =1MHz Gate DC Bias=0
Rg Gate input resistance Test signal level = 20 mV open drain
- 2.9 - Ω
Qg Total gate charge
VDD = 480 V, ID = 29 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
83.6 nC - 14 - nC
45 nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS
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STW36NM60N
Table 6. Switching times
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off-delay time Fall time
Electrical characteristics
Test conditions
VDD = 300 V, ID = 14.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14)
Min. Typ. Max Unit
17 ns 34 ns -106 ns 67 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD ISDM (1)
VSD (2)
Source-drain current Source-drain current (pulsed)
Forward on voltage
ISD = 29 A, VGS = 0
29 A -
116 A - 1.6 V
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
408
ISD = 29 A, di/dt = 100 A/µs -
8
VDD= 60 V (see Figure 19)
39
ns µC A
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 29 A, di/dt = 100 A/µs
480
VDD= 60 V Tj = 150 °C
- 10
(see Figure 19)
42
ns µC A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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Electrical characteristic.