STW36NM60N

STW36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features Order code STW36NM60N VDSS @ TJmax 650 V RDS(on) max < 0.105 Ω ID 29 A PW 210 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order code STW36NM60N Marking 36NM60N 3 !-V Package TO-247 Packaging Tape and reel June 2011 Doc ID 018963 Rev 1 1/13 www.st.com 13 Contents Contents STW36NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . ....