C2958

DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Total power dissipation PT Junction temperature Tj Storage temperature Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 160 140/160 5.0 500 1.0 1.0 150 −55 to +150 Unit V V V mA A W °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 100 V, IE = 0 Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE ** VCE = 2.0 V, IC = 100 mA DC base voltage VBE ** VCE = 5.0 V, IC = 20 mA Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A Base saturation voltage VBE(sat) ** IC = 1.0 A, IB = 0.2 A Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz Gain bandwidth product fT VCE = 10 V, IE = −20 mA ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed PACKAGE DRAWING (UNIT: mm) MIN. 100 0.6 30 TYP. 150 0.64 0.32 1.1 13 60 MAX. 200 200 400 0.7 0.7 1.3 30 Unit nA nA V V V pF MHz The information in th...