2SD788. D788 Datasheet

D788 2SD788. Datasheet pdf. Equivalent

Part D788
Description 2SD788
Feature 2SD787, 2SD788 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pa.
Manufacture Hitachi Semiconductor
Datasheet
Download D788 Datasheet

2SD787, 2SD788 Silicon NPN Epitaxial Application • Low freq D788 Datasheet
Recommendation Recommendation Datasheet D788 Datasheet




D788
2SD787, 2SD788
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB738 and 2SB739
Outline
TO-92MOD
3
2
1
1. Emitter
2. Collector
3. Base



D788
2SD787, 2SD788
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SD787
20
16
6
2
0.9
150
–55 to +150
2SD788
20
20
6
2
0.9
150
–50 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
2SD787
Item
Symbol Min Typ
Collector to base
breakdown voltage
V(BR)CBO 20
Collector to emitter
breakdown voltage
V(BR)CEO 16
Emitter to base
breakdown voltage
V(BR)EBO
6
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE*1
Collector to emitter
saturation voltage
VCE(sat)
——
——
100 —
——
Gain bandwidth product fT
— 100
2SD788
Max Min Typ
— 20 —
— 20 —
—6
2—
0.2 —
800 100
0.3 —
— — 100
Collector output
capacitance
Cob — 20 — — 20
Note: 1. The 2SD787 and 2SD788 are grouped by hFE as follows.
B CD E
100 to 200 160 to 320 250 to 500 400 to 800
Max Unit Test conditions
—V
IC = 10 µA, IE = 0
—V
IC = 1 mA, RBE =
—V
IE = 10 µA, IC = 0
2 µA
0.2 µA
800
0.3 V
VCB = 16 V, IE = 0
VEB = 6 V, IC = 0
VCE = 2 V, IC = 0.1 A
IC = 1 A, IB = 0.1 A
— MHz VCE = 2 V,
IC = 10 mA
— pF VCB = 10 V, IE = 0,
f = 1 MHz
2





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