D788

2SD787, 2SD788 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB738 and 2SB739 Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SD787, 2SD788 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD787 20 16 6 2 0.9 150 –55 to +150 2SD788 20 20 6 2 0.9 150 –50 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) 2SD787 Item Symbol Min Typ Collector to base breakdown voltage V(BR)CBO 20 — Collector to emitter breakdown voltage V(BR)CEO 16 — Emitter to base breakdown voltage V(BR)EBO 6 — Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) —— —— 100 — —— Gain bandwidth product fT — 100 2SD788 Max Min Typ — 20 — — 20 — —6 — 2— 0.2 — 800 100 0.3 — — — — — — — 100 Collector output capacitance Cob — 20 — — 20 Note: 1. The 2SD787 and 2SD788 are grouped by hFE as follows. B CD E 100 to 200 160 to 320 250 to 500 400 to 800 Max Unit Test conditions —V IC = 10 µA, IE = 0 —V IC = 1 mA, RBE = ∞ —V IE = 10 µA, IC = 0 2 µA 0.2 µA 800 0.3 V VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A IC = 1 A, IB = 0.1 A — MHz VCE = 2 V, IC = 10 mA — pF VCB = 10 V, IE = 0, f = 1 MHz 2 Collector Power ...