STD17N05 STD17N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD17N05 STD17N06
VDSS 50 V 60 V
R DS( on) < 0.085 Ω < 0.085 Ω
ID 17 A 17 A
s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ...
