D17N06

STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD17N05 STD17N06 VDSS 50 V 60 V R DS( on) < 0.085 Ω < 0.085 Ω ID 17 A 17 A s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area December 1996 3 2 1 IPAK TO-251 (Suffix ”-1”) 3 1 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Val ue STD17N05 STD17N06 50 60 50 60 ± 20 17 12 68 55 0 .3 7 -65 to 175 175 Unit V V V A A A W W/oC oC oC 1/10 STD17N05/STD17N06 THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl Thermal Resi...