Document
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
3. Packaging and Internal Circuit
TK16A60W
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25) (t = 1.0 s)
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR
600 ±30 15.8 63.2 40 231 4.0 15.8 63.2 150 -55 to 150 2000 0.6
V
A
W mJ A
V Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2012-05
1 2013-12-25 Rev.4.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 25.3 mH, RG = 25 Ω, IAR = 4.0 A
TK16A60W
Symbol
Rth(ch-c) Rth(ch-a)
Max Unit
3.13 /W 62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-12-25 Rev.4.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
IGSS IDSS V(BR)DSS Vth RDS(ON)
VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.79 mA VGS = 10 V, ID = 7.9 A
Min
600 2.7
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness
Symbol
Ciss Crss Coss Co(er) rg
tr ton tf toff dv/dt
Test Condition VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V.