EB202D

SY semiconductors ● RoHS ● 、 、 Shenzhen SY Semiconductors Co.，LTD. EB202D FEATURES ▲HIGH VOLTAGE CAPABILTY ▲HIGH SPEED SWITCHING ▲WIDE SOA ▲RoHS COMPL APPLICATION ▲FLUORESCENT LAMP ▲ELECTRONIC TRANSFORMER ▲ELECTONIC TRANSFORMER ▲SWICH MODE POWER SUPPLY ● Absolute Maximum Ratings (Tc=25℃) PARAMETER SYMBO L VALUE - Collector–Base Voltage VCBO 600 - Collector–Emitter Voltage - Emitter-Base Voltage V CEO V EBO 400 9 Collector Current IC 1 Total Power Dissipation @TC=25℃ P DTOT 12 Junction Temperature TJ 150 Storage Temperature TSTG -65-150 UNIT V V A W ℃ ℃ ● Electronic Characteristics (Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION - Collector–Base Cutoff Current - Collector-Emitter Cutoff Current - Emitter- Base Cutoff Current - Collector- Base Voltage - Collector–Emitter Voltage - Emitter-Base Voltage. ICBO ICEO I EBO BVCBO BVCEO BV EBO VCB=600V IE=0 VCE=400V IB=0 VEB=9V，IC=0 IC=1mA，IB=0 IC=10mA，IE=0 IC=1mA，IC=0 MIN MAX U N I T 100 µA 100 uA 100 uA 600 V 400 V 9V - Collector–Emitter Saturation Voltage - Base–Emitter Saturation Voltage Vcesat Vbesat IC=0.2A Ib=0.04A IC=0.75A Ib=0.25A IC=0.2A Ib=0.04A 0.5 V 0.6 V 1.2 V DC Current Gain Storage Time HFE Ts IC=0.2A VCE=5V 10 IC=1mA VCE=5V IC=0.25A（UI9600） 7 1.5 40 3.5 us SY semiconductors 1/4 SY semiconductors Shenzhen SY Semiconductors Co.，LTD. EB202D ● Ts CLASSIFICATION OF HFE AND TS HFE 10-15 15-20 20-25 25-30 TS 1.5-2.0 2.0-2.5 2.5-3.0 3.5-4.0 ●T...