Philips Semiconductors
Rectifier diodes Schottky barrier
Product specification
BYV133, BYV133B series
FEATURES
• Low f...
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV133, BYV133B series
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance
SYMBOL
a1 1
k2
a2 3
QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 20 A VF ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode
schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV133 series is supplied in the SOT78 conventional leaded package. The BYV133B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION 1 anode 1 (a)
tab
tab
2 cathode (k) 1
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM VRWM VR
Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage
Tmb ≤ 120 ˚C
BYV133BYV133B-
-
IO(AV)
IFRM IFSM
IRRM Tj Tstg
Average rectified forward current (both diodes conducting) Repetitive peak forward current (per diode) Non-repetitive peak forward current per diode
Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature
square wave; δ = 0.5; Tmb ≤ 120 ˚C
square wave; δ = 0.5; Tmb ≤ 120 ˚C t = 10 ms t = 8.3 ms sinu...