Document
AON6414
30V N-Channel MOSFET
General Description
Product Summary
The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
30V 30A < 10.5mΩ < 17mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 30 28 120 11 9 30 135 36 14 2 1.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 2.6
Max 30 64 3.5
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev 4: March 2011
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Page 1 of 6
AON6414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
IGSS VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current Gate Threshold Voltage
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V VDS=VGS ID=250µA
TJ=125°C
ID(ON)
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, VDS=5V VGS=10V, ID=20A
VGS=4.5V, ID=20A
TJ=125°C
gFS Forward Transconductance VSD Diode Forward Voltage
VDS=5V, ID=20A IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
30
1.3 120
1 5 ±100 1.9 2.5
8.7 13 14 40 0.72
10.5 16 17
1 40
1000 340 100 1.3
1300 2.0
18 8.5 3.1 4.8 5.6 5.5 18.5 5 29 24
23 38
V
µA
nA V A
mΩ
mΩ S V A
pF pF pF Ω
nC nC nC nC ns ns ns ns ns nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: March 2011
www.aosmd.com
Page 2 of 6
AON6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
120 100
80 60 40 20
0 0
10V 6.0V
4.5V
3.5V VGS=3.0V
1234 VDS (Volts)
Figure 1: On-Region Characteristics
5
ID(A)
60 VDS=5V
50
40
30
20
10
0 1
125°C
25°C
234
VGS(Volts) Figure 2: Transfer Characteristics
5
RDS(ON) (mΩ)
16 VGS=4.5V
14
12
10 VGS=10V
8
1.8 ID=20A
1.6
1.4
1.2
1
VGS=10V VGS=4.5V
Normalized On-Resistance
6 0 5 10 15 20 25
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
30
0.8 0
25 50 75 100 125 150
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
RDS(ON) (mΩ)
40 35 ID=20A
30
25
20 125°C
15
10 5 25°C 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
Rev 4:.