DatasheetsPDF.com

AON6414 Dataheets PDF



Part Number AON6414
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6414 DatasheetAON6414 Datasheet (PDF)

AON6414 30V N-Channel MOSFET General Description Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise note.

  AON6414   AON6414


Document
AON6414 30V N-Channel MOSFET General Description Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 28 120 11 9 30 135 36 14 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4: March 2011 www.aosmd.com Page 1 of 6 AON6414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=30V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS ID=250µA TJ=125°C ID(ON) On state drain current RDS(ON) Static Drain-Source On-Resistance VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.5V, ID=20A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 1.3 120 1 5 ±100 1.9 2.5 8.7 13 14 40 0.72 10.5 16 17 1 40 1000 340 100 1.3 1300 2.0 18 8.5 3.1 4.8 5.6 5.5 18.5 5 29 24 23 38 V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: March 2011 www.aosmd.com Page 2 of 6 AON6414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 120 100 80 60 40 20 0 0 10V 6.0V 4.5V 3.5V VGS=3.0V 1234 VDS (Volts) Figure 1: On-Region Characteristics 5 ID(A) 60 VDS=5V 50 40 30 20 10 0 1 125°C 25°C 234 VGS(Volts) Figure 2: Transfer Characteristics 5 RDS(ON) (mΩ) 16 VGS=4.5V 14 12 10 VGS=10V 8 1.8 ID=20A 1.6 1.4 1.2 1 VGS=10V VGS=4.5V Normalized On-Resistance 6 0 5 10 15 20 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature RDS(ON) (mΩ) 40 35 ID=20A 30 25 20 125°C 15 10 5 25°C 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 125°C 25°C 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Rev 4:.


Si2415 AON6414 VS-30CTQ035PbF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)