30V N-Channel MOSFET
AO3434
30V N-Channel MOSFET
General Description
The AO3434 uses advanced trench technology to provide excellent RDS(ON)...
Description
AO3434
30V N-Channel MOSFET
General Description
The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
Product Summary
VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ
ESD protected
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
SOT23
Top View
Bottom View
D
D D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Parameter
Symbol 10 sec
Steady-State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
4.2 3.5 ID 3.3 2.8 IDM 30
Power Dissipation
TA=25°C TA=70°C
1.4 1.0 PD 0.9 0.64
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 70 100
63
Max 90 125
80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev.4. 0: August 2013
www.aosmd.com
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AO3434
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, ID=4.2A
VGS=4.5V, I...
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