N-Channel MOSFET. AO3438 Datasheet

AO3438 MOSFET. Datasheet pdf. Equivalent

Part AO3438
Description N-Channel MOSFET
Feature AO3438 20V N-Channel MOSFET General Description The AO3438 uses advanced trench technology to provi.
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AO3438
AO3438
20V N-Channel MOSFET
General Description
The AO3438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. A
Product Summary
VDS = 20V
ID = 3A
RDS(ON) < 62m
RDS(ON) < 70m
RDS(ON) < 85m
(VGS = 4.5V)
(VGS = 4.5V)
(VGS = 2.5V)
(VGS = 1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
3
2.5
16
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO3438
AO3438
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±8V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 0.7
1
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
16
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
VGS=2.5V, ID=2.8A
TJ=125°C
51 62
68 85 m
58 70 m
VGS=1.8V, ID=2.5A
68 85 m
gFS Forward Transconductance
VDS=5V, ID=3A
11 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
2A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
260 320
48
27
3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=3.3,
RGEN=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs
2.9 3.8 nC
0.4 nC
0.6 nC
2.5 ns
3.2 ns
21 ns
3 ns
14 19 ns
3.8 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stil1l a2ir environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





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