N-Channel MOSFET. AO3702 Datasheet

AO3702 MOSFET. Datasheet pdf. Equivalent

Part AO3702
Description N-Channel MOSFET
Feature AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description T.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO3702 N-Channel Enhancement Mode Field Effect Transistor wi AO3702 Datasheet
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AO3702
AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide
excellent RDS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
-AO3702L is Halogen Free
Features
VDS (V) = 20V
ID = 3.5A (VGS = 4.5V)
RDS(ON) < 62m(VGS = 4.5V)
RDS(ON) < 70m(VGS = 2.5V)
RDS(ON) < 85m(VGS = 1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
20
±8
3.5
2.7
25
1.15
0.7
-55 to 150
Typ
80.3
117
43
153
173
103
Schottky
20
1
0.5
10
0.66
0.42
-55 to 150
Max
110
150
80
190
220
140
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO3702
AO3702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=2.5V, ID=3A
VGS=1.8V, ID=2.5A
Forward Transconductance
VDS=5V, ID=2A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
20
TJ=55°C
0.5
25
TJ=125°C
V
1
5
µA
±100 nA
0.68 1
V
A
50
70
62
90
m
56 70 m
66 85
15 S
0.7 1
V
1.6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
260 320
48
27
3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
2.9 3.8 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=3.5A
0.4 nC
Qgd Gate Drain Charge
0.6 nC
tD(on)
Turn-On DelayTime
2.5 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=3,
RGEN=6
3.2 ns
21 ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=3.5A, dI/dt=100A/µs
14 19 ns
Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs
3.4 nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
IF=0.5A
0.37 0.5
V
Irm
Maximum reverse leakage current
VR=16V
VR=16V, TJ=125°C
0.1 mA
20
CT Junction Capacitance
VR=10V
trr
Schottky Reverse Recovery Time
IF=1A, dI/dt=100A/µs
Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs
52 pF
9.2 12 ns
1.7 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev1:March 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com





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