AO3702

AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3702/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AO3702 and AO3702L are electrically identical. -RoHs Complaint -AO3702L is Halogen Free Features VDS (V) = 20V ID = 3.5A (VGS = 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS = 2.5V) RDS(ON) < 85mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] SOT-23-5 Top View G 15 D S2 A 34 K G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C TA=70°C ID Pulsed Drain Current B IDM Schottky reverse voltage VKA Continuous Forward Current A TA=25°C TA=70°C IF Pulsed Forward Current B IFM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Thermal Characteristics Schottky Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Symbol RθJA RθJL RθJA RθJL DK SA MOSFET 20 ±8 3.5 2.7 25 1.15 0.7 -55 to 150 Typ 80.3 117 43 153 173 103 Schottky 20 1 0.5 10 0.6...