AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO3702/L uses adv...
AO3702 N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AO3702 and AO3702L are electrically identical. -RoHs Complaint -AO3702L is Halogen Free
Features
VDS (V) = 20V ID = 3.5A (VGS = 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS = 2.5V) RDS(ON) < 85mΩ (VGS = 1.8V)
SCHOTTKY VDS (V) = 20V, IF = 1A, VF<
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SOT-23-5 Top View
G 15 D
S2 A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Steady-State Steady-State
Thermal Characteristics
Schottky Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Steady-State Steady-State
Symbol RθJA RθJL
RθJA RθJL
DK
SA
MOSFET 20 ±8 3.5 2.7 25
1.15 0.7 -55 to 150 Typ 80.3 117 43
153 173 103
Schottky
20 1 0.5 10 0.6...