N-Channel MOSFET. AO4404 Datasheet

AO4404 MOSFET. Datasheet pdf. Equivalent

Part AO4404
Description N-Channel MOSFET
Feature AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404/L uses adv.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO4404
AO4404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. AO4404 and
AO4404L are electrically identical.
-RoHS Compliant
-AO4404L is Halogen Free
Features
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
RDS(ON) < 48m(VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
3
2.1
15
34
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4404
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7 1 1.4 V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8.5A
VGS=4.5V, ID=8.5A
TJ=125°C
20.5
30
24
36
m
25 30 m
VGS=2.5V, ID=5A
40 48 m
gFS Forward Transconductance
VDS=5V, ID=5A
10 16
S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.71 1
V
IS Maximum Body-Diode Continuous Current
4.3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
857 1050 pF
97 pF
71 100 pF
0.7 1.4
2
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8,
RGEN=6
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
9.7 12
1.63
3.1
3.3 5
4.7 7
26 39
4.1 6.2
15 20
8.6 12
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s junction to ambient thermal resistance rating.
Rev10:May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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