AO4404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404/L uses advanced trench technol...
AO4404 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical. -RoHS Compliant -AO4404L is Halogen Free
Features
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C
Power Dissipation TA=70°C Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 8.5 7.1 60 3 2.1 15 34
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units V V
A
W A mJ °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Cond...