Document
AO4404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical. -RoHS Compliant -AO4404L is Halogen Free
Features
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C
Power Dissipation TA=70°C Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 8.5 7.1 60 3 2.1 15 34
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units V V
A
W A mJ °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1 5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7 1 1.4 V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8.5A VGS=4.5V, ID=8.5A
TJ=125°C
20.5 30
24 36
mΩ
25 30 mΩ
VGS=2.5V, ID=5A
40 48 mΩ
gFS Forward Transconductance
VDS=5V, ID=5A
10 16
S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.71 1
V
IS Maximum Body-Diode Continuous Current
4.3 A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
857 1050 pF
97 pF
71 100 pF
0.7 1.4
2
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω
IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs
9.7 12 1.63 3.1 3.3 5 4.7 7 26 39 4.1 6.2 15 20 8.6 12
nC nC nC ns ns ns ns
ns nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev10:May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
30 10V
25
20
15
3V 4.5V
2.5V
20 16 12
ID(A)
8 10 2V
54 VGS=1.5V
0 012345
0 0
VDS (Volts) Fig 1: On-Region Characteristics
60 1.8
VDS=5V
125°C 25°C
0.5 1 1.5 2 2.5 VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
RDS(ON) (mΩ)
50 VGS=2.5V
40
30 VGS=4.5V
20
10 0
VGS=10V 5 10 15 20
ID (A) Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.6 VGS=4.5V
1.4 VGS=10V
1.2 VGS=2.5V
1
0.8 0
25 50 75 100 125 150
Temperature (°C) Figure 4: On-Resistance vs. Junction
Temperature
175
100 1.0E+01
90
80 ID=5A 70 125°C
60
1.0E+00 1.0E-01 1.0E-02
125°C
IS (A)
RDS(ON) (mΩ)
50 1.0E-03
THIS PRO4D0UCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONS1U.0ME-E0R4 MARKET. APPLICAT25IO°CNS OR USES AS CRITICAL
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NOT ASSUME ANY LIABILITY ARI.