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AO4404 Dataheets PDF



Part Number AO4404
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO4404 DatasheetAO4404 Datasheet (PDF)

AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical. -RoHS Compliant -AO4404L is Halogen.

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AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. AO4404 and AO4404L are electrically identical. -RoHS Compliant -AO4404L is Halogen Free Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B PD IAR EAR Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 8.5 7.1 60 3 2.1 15 34 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 µA IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 1 1.4 V ID(ON) On state drain current VGS=4.5V, VDS=5V 40 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A VGS=4.5V, ID=8.5A TJ=125°C 20.5 30 24 36 mΩ 25 30 mΩ VGS=2.5V, ID=5A 40 48 mΩ gFS Forward Transconductance VDS=5V, ID=5A 10 16 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.71 1 V IS Maximum Body-Diode Continuous Current 4.3 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 857 1050 pF 97 pF 71 100 pF 0.7 1.4 2 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=4.5V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs 9.7 12 1.63 3.1 3.3 5 4.7 7 26 39 4.1 6.2 15 20 8.6 12 nC nC nC ns ns ns ns ns nC A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev10:May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 30 10V 25 20 15 3V 4.5V 2.5V 20 16 12 ID(A) 8 10 2V 54 VGS=1.5V 0 012345 0 0 VDS (Volts) Fig 1: On-Region Characteristics 60 1.8 VDS=5V 125°C 25°C 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 Normalized On-Resistance RDS(ON) (mΩ) 50 VGS=2.5V 40 30 VGS=4.5V 20 10 0 VGS=10V 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 175 100 1.0E+01 90 80 ID=5A 70 125°C 60 1.0E+00 1.0E-01 1.0E-02 125°C IS (A) RDS(ON) (mΩ) 50 1.0E-03 THIS PRO4D0UCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONS1U.0ME-E0R4 MARKET. APPLICAT25IO°CNS OR USES AS CRITICAL COOUMT POOFNS23EU00NCTHSAINPPLLIFICEAST2UI5OP°NCPSOROTRDUESVEICSEOSFOITRSSPYRSOTDEUMCSTASR. EANOOSTRAEUS1TE.0HREOV-RE05SIZETHDE. AROIGSHDTOTEOS NOT ASSUME ANY LIABILITY ARI.


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