N-Channel MOSFET. AO4490 Datasheet

AO4490 MOSFET. Datasheet pdf. Equivalent

Part AO4490
Description N-Channel MOSFET
Feature AO4490 30V N-Channel MOSFET General Description The AO4490 uses advanced trench technology to provi.
Manufacture Alpha & Omega Semiconductors
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AO4490 30V N-Channel MOSFET General Description The AO4490 AO4490 Datasheet
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AO4490
AO4490
30V N-Channel MOSFET
General Description
The AO4490 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V, while
retaining a 20V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a load switch and
general purpose applications.
Product Summary
VDS (V) = 30V
ID = 16A
(VGS = 10V)
RDS(ON) < 7.2m(VGS = 10V)
RDS(ON) < 10m(VGS = 4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
16
13
120
30
135
2.8
1.8
-55 to 150
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
62
18
Max
45
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4490
AO4490
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=16A
VGS=4.5V, ID=12A
TJ=55°C
TJ=125°C
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=16A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=16A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=16A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs
30
1.4
120
37
1
5
10
1.8 2.5
6
8.5
8
55
0.70
7.2
10
10
1.0
4
1803
387
238
1.3
2170
2
36 48
19
3.9
8.7
7.6
6.4
27
8.5
27 33
17
V
µA
µA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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