AO4490

AO4490 30V N-Channel MOSFET General Description The AO4490 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. Product Summary VDS (V) = 30V ID = 16A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH G ID IDM IAR EAR Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 16 13 120 30 135 2.8 1.8 -55 to 150 D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 62 18 Max 45 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Bod...