N-Channel MOSFET. AO4706 Datasheet

AO4706 MOSFET. Datasheet pdf. Equivalent


Part AO4706
Description N-Channel MOSFET
Feature AO4706 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4706 uses advanced trench t.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO4706 30V N-Channel MOSFET SRFET TM General Description SR AO4706 Datasheet
Recommendation Recommendation Datasheet AO4706 Datasheet




AO4706
AO4706
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4706 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Product Summary
VDS (V) = 30V
ID =16.5A (VGS = 10V)
RDS(ON) < 6.8m(VGS = 10V)
RDS(ON) < 8.2m(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
16.5
13.2
100
30
135
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
V
A
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4706
AO4706
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=30V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
TJ=125°C
ID(ON)
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, VDS=5V
VGS=10V, ID=16.5A
VGS=4.5V, ID=15A
TJ=125°C
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=16.5A
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=17A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.9,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=16.5A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/µs
30
1.5
100
0.02
10
1.85
0.1
20
0.1
2.4
5.6
8.4
6.8
112
0.37
6.8
10.5
8.2
0.5
5
4000
520
217
0.6
5000
0.9
59 77
27 35
12
11
9
9
37
8
17 20
21
V
mA
µA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com







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