N-Channel MOSFET. AO4714 Datasheet

AO4714 MOSFET. Datasheet pdf. Equivalent

Part AO4714
Description N-Channel MOSFET
Feature AO4714 30V N-Channel MOSFET SRFET TM General Description SRFET TM AO4714 uses advanced trench techn.
Manufacture Alpha & Omega Semiconductors
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AO4714 30V N-Channel MOSFET SRFET TM General Description SR AO4714 Datasheet
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AO4714
AO4714
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM AO4714 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent RDS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Product Summary
VDS (V) = 30V
ID =20A (VGS = 10V)
RDS(ON) < 4.7m(VGS = 10V)
RDS(ON) < 6.7m(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current F
TA=70°C
Pulsed Drain Current B
VGS
IDSM
IDM
TA=25°C
Power Dissipation F TA=70°C
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
PDSM
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Maximum
30
±20
20
16
100
3.0
2.0
30
135
-55 to 150
Typ
31
59
16
Max
41
75
24
Units
V
V
A
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4714
AO4714
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=16A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
Min
30
1.2
100
Typ Max Units
0.1
20
0.1
1.5 2.2
3.9
5.9
5.4
90
0.36
4.7
7.3
6.7
0.5
6
V
mA
µA
V
A
m
m
S
V
A
3760
682
314
0.75
4512
1.5
pF
pF
pF
62 74
29 35 nC
12 nC
12 nC
9.5 ns
8.5 ns
34 ns
9 ns
18 27 ns
22 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t10s junction to ambient thermal resistance rating.
Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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