AO4716 N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AO4716/L use...
AO4716 N-Channel Enhancement Mode Field Effect
Transistor
SRFET TM
General Description
Features
SRFET TM AO4716/L uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
AO4716 and AO4716L are electrically identical. - RoHS Compliant - AO4716L is Halogen Free
SOIC-8
VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
D
D
G S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
S
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Symbol VDS VGS
IDSM IDM IAR EAR
PDSM
TJ, TSTG
Maximum 30 ±20 16.5 13.0 180 25 94 3.1 2.0
-55 to 150
Units V V
A
A A mJ
W
°C
Thermal Characteristics Parameter
Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59
16
Max 40 75
24
Units °C/W °C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
ID...