Document
AO4716 N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AO4716/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
AO4716 and AO4716L are electrically identical. - RoHS Compliant - AO4716L is Halogen Free
SOIC-8
VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
D
D
G S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
S
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Symbol VDS VGS
IDSM IDM IAR EAR
PDSM
TJ, TSTG
Maximum 30 ±20 16.5 13.0 180 25 94 3.1 2.0
-55 to 150
Units V V
A
A A mJ
W
°C
Thermal Characteristics Parameter
Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59
16
Max 40 75
24
Units °C/W °C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS VGS(th) ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current Gate Threshold Voltage On state drain current
ID=1mA, VGS=0V VDS=30V, VGS=0V
VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V
TJ=125°C
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=16.5A VGS=4.5V, ID=13A
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=16.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=15V, ID=16.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.8Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=16.5A, dI/dt=300A/us
Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/us
Min 30
1.3 180
Typ Max Units
1.6
5.8 9.9 8.2 55 0.33
0.1 20 0.1 2
7.0 12.3 10.0
0.5 5.5
V
mA
µA V A
mΩ
mΩ S V A
2154 474 185 0.75
2650 1.1
pF pF pF Ω
37 45 17.8 23 6.6 7.6 6.8 7.2 25.2 5.8 12 18 10.5
nC nC nC nC ns ns ns ns
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤10s thermal resistance rating.
Rev2: Nov 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
180 10V
150
120
90
6V 7V
5V 4.5V 4V
60 3.5V
30 VGS=3V
0 012345
VDS (Volts) Figure 1: On-Region Characteristics
ID(A)
30 25 20 15 10
5 0
1
VDS=5V
125°C 25°C
23 VGS(Volts)
Figure 2: Transfer Characteristics
4
RDS(ON) (mΩ )
12
10 VGS=4.5V 8
6 VGS=10V
4
1.8 ID=16.5A
1.6
1.4
1.2
1
VGS=10V VGS=4.5V
Normalized On-Resistance
2 0 5 10 15 20 25 30
ID (A) Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8 0
30 60 90 120 150
Temperature (°C) Figure 4: On-Resistance vs. Junction
Temperature
180
RDS(ON) (mΩ )
13 ID=16.5A
11 125°C
9
7
5 25°C
3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
IS (A)
1.0E+02
1.0E+01
125°C
1.0E+00 1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05 0.0
0.2 0.4 0.6 0.8
VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VGS (Volts)
10
8 VDS=15V
6 ID=16.5A
4
2
0 0 8 16.