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AO4716 Dataheets PDF



Part Number AO4716
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO4716 DatasheetAO4716 Datasheet (PDF)

AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4716 and AO4716L are electrically identical. - RoHS Compliant - AO4716L is Halogen Free SOIC-8 VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7.

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AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4716 and AO4716L are electrically identical. - RoHS Compliant - AO4716L is Halogen Free SOIC-8 VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Symbol VDS VGS IDSM IDM IAR EAR PDSM TJ, TSTG Maximum 30 ±20 16.5 13.0 180 25 94 3.1 2.0 -55 to 150 Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16.5A VGS=4.5V, ID=13A TJ=125°C gFS Forward Transconductance VDS=5V, ID=16.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=16.5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.8Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=16.5A, dI/dt=300A/us Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/us Min 30 1.3 180 Typ Max Units 1.6 5.8 9.9 8.2 55 0.33 0.1 20 0.1 2 7.0 12.3 10.0 0.5 5.5 V mA µA V A mΩ mΩ S V A 2154 474 185 0.75 2650 1.1 pF pF pF Ω 37 45 17.8 23 6.6 7.6 6.8 7.2 25.2 5.8 12 18 10.5 nC nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤10s thermal resistance rating. Rev2: Nov 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 180 10V 150 120 90 6V 7V 5V 4.5V 4V 60 3.5V 30 VGS=3V 0 012345 VDS (Volts) Figure 1: On-Region Characteristics ID(A) 30 25 20 15 10 5 0 1 VDS=5V 125°C 25°C 23 VGS(Volts) Figure 2: Transfer Characteristics 4 RDS(ON) (mΩ ) 12 10 VGS=4.5V 8 6 VGS=10V 4 1.8 ID=16.5A 1.6 1.4 1.2 1 VGS=10V VGS=4.5V Normalized On-Resistance 2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 30 60 90 120 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 RDS(ON) (mΩ ) 13 ID=16.5A 11 125°C 9 7 5 25°C 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 1.0E+02 1.0E+01 125°C 1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VGS (Volts) 10 8 VDS=15V 6 ID=16.5A 4 2 0 0 8 16.


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