AO4716

AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4716 and AO4716L are electrically identical. - RoHS Compliant - AO4716L is Halogen Free SOIC-8 VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Symbol VDS VGS IDSM IDM IAR EAR PDSM TJ, TSTG Maximum 30 ±20 16.5 13.0 180 25 94 3.1 2.0 -55 to 150 Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4716 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS ID...