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AO4722 Dataheets PDF



Part Number AO4722
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO4722 DatasheetAO4722 Datasheet (PDF)

AO4722 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D SRFE.

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AO4722 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B IDSM IDM IAR EAR 11.6 9.3 100 17 43 8.5 6.8 Power Dissipation TA=25°C TA=70°C 3.1 1.7 PDSM 2.0 1.1 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State RθJA Steady-State RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4722 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250uA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=11.6A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=9.3A VDS=5V, ID=11.6A IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current TJ=125°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=11.6A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=11.6A, dI/dt=300A/µs Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/µs Min 30 1.3 100 Typ Max Units 0.1 10 0.1 1.65 2.5 11.5 14 17 21 17.5 22 28 0.43 0.5 4 V mA µA V A mΩ mΩ S V A 903 1100 225 91 1.7 2.6 pF pF pF Ω 15.3 20 7.8 10 2.0 3.9 5.0 9.2 17.8 4.4 17 20 30.0 nC nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limite.


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