Document
AO4722
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM IDM IAR EAR
11.6 9.3
100 17 43
8.5 6.8
Power Dissipation
TA=25°C TA=70°C
3.1 1.7 PDSM 2.0 1.1
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Units V
A
mJ W °C
Thermal Characteristics Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s Steady-State
RθJA
Steady-State
RθJL
Typ 32 60
17
Max 40 75
24
Units °C/W °C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4722
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=11.6A
Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
VGS=4.5V, ID=9.3A VDS=5V, ID=11.6A IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=15V, ID=11.6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=11.6A, dI/dt=300A/µs Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/µs
Min 30
1.3 100
Typ Max Units
0.1 10 0.1 1.65 2.5
11.5 14 17 21 17.5 22 28 0.43 0.5
4
V
mA
µA V A
mΩ
mΩ S V A
903 1100 225 91 1.7 2.6
pF pF pF Ω
15.3 20 7.8 10 2.0 3.9 5.0 9.2 17.8 4.4 17 20 30.0
nC nC nC nC ns ns ns ns
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limite.