N-Channel MOSFET. AO4726 Datasheet

AO4726 MOSFET. Datasheet pdf. Equivalent


Part AO4726
Description N-Channel MOSFET
Feature AO4726 30V N-Channel MOSFET SRFET TM General Description SRFETTM The AO4726 uses advanced trench te.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO4726 30V N-Channel MOSFET SRFET TM General Description SR AO4726 Datasheet
Recommendation Recommendation Datasheet AO4726 Datasheet




AO4726
AO4726
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM The AO4726 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications.
Product Summary
VDS (V) = 30V
ID =20A (VGS = 10V)
RDS(ON) < 4.5m(VGS = 10V)
RDS(ON) < 5.5m(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
30
±12
20
16
105
30
45
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t 10s
Steady-State
RθJA
Steady-State
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4726
AO4726
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.83,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
30
1.2
105
2500
240
150
0.4
49
22
6.5
5.5
8
11
Typ
1.6
3.7
5.6
4.3
150
0.40
3160
350
260
0.8
61
27
8
9
10
3
50
6
10
14
Max
0.5
100
±100
2.1
4.5
6.7
5.5
0.7
5.0
3800
460
270
1.2
73
32
9.5
12.5
12
17
Units
V
mA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
±12
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s junction to ambient thermal resistance rating.
Rev4: Oct. 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com







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