AO5404E

AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical. -RoHS compliant -AO5404EL is Halogen Free Features VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.8V) ESD PROTECTED! SC89-3L D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain TA=25°C Current A, F TA=70°C Pulsed Drain Current B ID IDM 0.5 0.5 0.5 0.45 3 TA=25°C Power Dissipation A TA=70°C PD 0.38 0.24 0.28 0.18 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State RθJA Steady-State RθJL Typ 275 360 300 Max 330 450 350 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5404E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Thresho...