AOD454A

AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Top View TO252 DPAK Bottom View D D Features VDS (V) = 40V ID = 20A (VGS = 10V) RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 20 15 40 14 9.8 37 18 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Case F t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16.7 40 3 Max 25 50 4 Units V V A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD454A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdo...